摘要
本文介绍了高频、高压双极型晶体管的一种设计结构和制造工艺。用该设计与工艺做出了耐压大于 2 0 0V、fT 大于 2 0
The article describes the design structure and produce processing for bipolar transistors with performance of high frequency and high voltage.The breakdown voltage of produced transistors is greater than 200V and the f T is higher than 200 MHz.
出处
《微电子技术》
2001年第4期16-18,共3页
Microelectronic Technology