摘要
综述了 族氮化物量子点材料及其器件应用研究现状。主要涉及了 Ga N,In N和 In Ga N量子点材料的形貌结构特征、实现工艺方法、外延生长机理、光学特性和器件应用等内容。同时对该领域的未来研究趋势也进行了讨论。
The current statuses of group-Ⅲ nitride semiconductor quantum dots and their device applications are reviewed.The morphological structure,established techniques and methods,epitaxial growth mechanism,optical character of the GaN,InN,and InGaN quantum dots as well as their device applications are involved.The research trend in this area is also discussed.
出处
《半导体情报》
2001年第4期22-26,共5页
Semiconductor Information
