摘要
介绍了 0 .5~ 1 .0 GHz微波微封装低噪声场效应管放大器的研制。采用负反馈的设计原理 ,利用 Serenade软件进行了 CAD设计。主要指标为 :工作频率 0 .5~ 1 .0 GHz,增益≥ 2 5 d B,增益平坦度≤± 0 .5 d B,驻波比≤ 2 .0∶ 1 ,噪声系数≤ 1 .0 d B,封装形式 TO- 8F。
A 0.5~1.0GHz microwave mini-packed P-band low noise FET amplifier is described in this paper.Based on negative feedback principle,it can provide more than 25dB gain,±0.5dB flatness,less than 1.0dB noise figure and less than 2.0∶1 VSWR over the 0.5~1.0GHz bandwith.It was packed in TO-8F.
出处
《半导体情报》
2001年第4期42-44,共3页
Semiconductor Information