多元胞半导体浪涌防护器转折特性与I_H的折衷

Compromise between the Break-over Characteristics and the Holding Current of the Multi-cell Silicon Surge Protection Device

由晶闸管短路发射极模型提出了半导体浪涌防护器的一种多元胞结构 ,分析了该模型的转折特性与维持电流IH.在归一化条件下 ,定量表述了其折衷关系 ,从而确定了某一工艺参数条件下的最佳D/d值 ,为提高SSPD的浪涌能力、改善响应特性、实现器件的规模化生产具有重要意义 .

Based on the model of thyristor short circuit emitter, a novel multi cell structure model for silicon surge protection device is proposed in this paper. The break over characteristics and the holding current of this model are analyzed in detail. Under the normalization condition, the quantitative analysis for their compromise determines an optimized value of D/d under certain process condition. This analysis has the significance for increasing the surge handling capability of SSPD, improving the response characteristics and realizing this device for production in scale.