基于多孔硅光激荧光淬灭效应的SO_2传感器

A Porous Silicon Sensor Based on Photoluminescent Quenching for Monitoring Sulfur Dioxide

本文提出了用于大气环境中 SO2 含量监测的多孔硅 (porous silicon)光学传感方法。该方法利用电化学浸蚀和 UV光氧化后形成轻微氧化多孔 Si,所产生的表面膜对 SO2 气体具有良好的敏感特性。本文依据 Si Ox Hy/Si界面处的过渡态模型分析了该方法的传感原理 ,利用 SEM和荧光光谱仪对 U V光氧化的多孔 Si膜层性质及传感性能进行初步实验 。

An optical sensing method was proposed for monitoring SO 2 gas in the environment based on photoluminescent quenching of lightly oxidized porous silicon.After electrochemica,etching and light oxidizing by UV light,the porous silicon film showed high sensitive characteristic to SO 2 gas.The principle of this method was analyzed,the film properties were studized by SEM and luminescence spectrometer.The reversible photoluminescent quenching of lightly oxidized porous silicon can be observeded so long as contacting with SO 2 gas.The experimental results were in good accordac e with the principle.