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钇改性PZT薄膜的极化印刻研究 被引量:2

Imprint Properties of Yttrium Modified PZT Thin Films
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摘要 铁电PZT薄膜的极化印刻(imprinting)是PZT不挥发存储器失效的重要原因之一.本文研究了不同钇量改性的PZT(40/60)铁电薄膜在高温(120℃)和偏置电压下的极化印刻特性,发现适量的钇掺杂,改善了PZT薄膜电容器单元的极化印刻. Imprint failure is one of the important failure mechanisms for PZT nonvolatile memories. The imprint properties of Y-dopped PZT(40/60) thin films at bias voltages and a temperature of 120 degreesC were investigated. The results obtained show that the imprint-resistant properties of the PZT thin films are enhanced by a suitable Y dopant concentration.
出处 《无机材料学报》 SCIE EI CAS CSCD 北大核心 2001年第5期928-932,共5页 Journal of Inorganic Materials
基金 国家"863"高技术(715-002-008)资助 国家自然科学基金(59995200)
关键词 铁电薄膜 Y-PZT薄膜 极化印刻 铁电电容 存储器 材料 改性 掺杂 ferroelectric thin films Y-dopped PZT(40/60) thin films imprinting
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