摘要
提出一个用磁控溅射制备碳化硅薄膜的简化热力学模型。首先选出构成β－ C3N4,P－ C3N4 或 － (C2N2)n－的最可能表面反应 ,然后通过求解这个热力学模型计算了生长参量空间中不同类型 薄膜淀积区域的分界线。这些结果与一些实验结果很好地符合。
A simple thermodynamic model for fabricating carbon nitride film via magnetron sputtering is suggested. Firstly the most possible surface reactions synthesizingβ－ C3N4, P－ C3N4 or－ (C2N2)n－ are selected. Then by solving the thermodynamic model, the partition lines in the growth parameter space are calculated. These lines show the regions where different kinds of films can be deposited. The results are in good agreement with several experimental data.
出处
《功能材料与器件学报》
CAS
CSCD
2001年第3期273-276,共4页
Journal of Functional Materials and Devices
基金
Natural Science Foundation of Shanxi Province
China State Key Projects of Basic Research (G1999064509).
