摘要
用射频平面磁控溅射法在 Ar/O2 气氛中溅射 V2 O5粉末靶制得 V2 O5薄膜 ,然后在大气中对样品薄膜作 2 5 0℃～ 40 0℃的热处理试验。用 XRD分析表明薄膜随着热处理温度的升高 ,除了晶粒尺寸不断长大以外 ,薄膜的组分也在发生不断的变化 ,在低温下处理时出现的某些结构在高温处理后消失 ,同样在高温下处理后也出现了一些低温下没有出现的新结构。这种结构变化导致在 30 0℃以下的温度处理后的薄膜在可见光和近红外波段都有异常大的吸收 ;在 35 0℃以上的温度处理后的薄膜在可见光和近红外波段的吸收显著地减小。
Vanadium pentoxide thin film was prepared in Ar/O 2 ambient using rf planar magnetron sputtering,then annealed in air under the temperature from 250℃~400℃. It was found that not only the grain size in thin film augmented, but the ingredient and the crystal configuration in the thin film varied obviously when the annealing temperature gradually increased. Consequentially the optical properties of the thin film changed greatly with increase of annealing temperature. A remarkable absorption in the visible and near IR region was found when the annealing temperature below 300℃, while decreased drastically in the case of annealing temperature above 350℃.
出处
《光学仪器》
2001年第5期76-80,共5页
Optical Instruments
