高反射率13nmMo/Si多层膜

High reflection 13nm Mo/Si multilayer

采用离子束溅射在不同的工艺参数下制备一系列单层 Mo膜、Si膜及多层膜 ,并用原子力显微镜分析单层膜表面粗糙度及两种材料间的界面扩散。当束流电压超过一定数值时 ,可避免单层膜的柱状生长 ;在 Mo- on- Si和 Si- on- Mo界面中 ,Mo- on- Si界面扩散对反射率的影响更大。采用 X射线衍射仪分析多层膜中 Mo、Si材料的晶体结构 ,均为多晶结构 ,其中 Mo为 ( 1 1 0 )晶向 ,Si为 ( 4 0 0 )晶向。根据上述分析优化工艺参数 ,获得的 1 3nm Mo/Si多层膜反射率达到 60 %。

We make a series of single Mo and Si layers and multilayers by ion beam sputtering deposition system with various deposition parameters,characterize them with atomic force microscope(AFM)and high angle θ 2θ XRD spectra.We find that Mo and Si film can avoid columnar like growth once the beam voltage exceeds a threshold,between the two types of interface diffusion.Mo on Si interface diffusion contributes more to the decrease of reflectivity,the Mo and Si layers are polycrystalline with(110)and(400)texture.According to the upper analysis,we optimize the deposition parameters,improve the normal incidence reflectance of Mo/Si multiplayer up to 60% at 13nm.