Si基多孔SiO_2薄膜驻极体电荷储存稳定性

Charge storage stability of the porous SiO_2 thin film electret based on Si substrate

通过控制溶胶 凝胶 (sol gel)工艺条件 ,利用相应条件下样品的红外光谱 ,等温表面电位衰减 ,开路热刺激放电电流谱等 ,考察了Si基多孔SiO2 薄膜驻极体体内沉积的空间电荷的储存稳定性 ,分析了各种工艺参数与薄膜驻极体性质之间的联系。实验结果表明 ,反应物中水含量对薄膜驻极体的电荷储存稳定性及陷阱分布有一定的影响 ;

By controlling the process of sol gel, the charge storage stability of porous silica thin film electret based on silicon substrate were investigated by measurements of IR spectra, isothermal surface potential decay and current spectra of open circuit Thermally Stimulated Discharge (TSD). Moreover, the relationships between these parameters were analyzed. The results show that the content of water in the solution of reaction has some influences on the charge storage stability and traps distribution of sol gel silica thin film. Temperature and time of annealing have big influences on its charge storage stability.