摘要
用一种新的低温过程制备了SrBi2Ta2O9铁电薄膜。在Sol-Gel方法中用Pt/Ti/SiO2/Si作衬底,研究了薄膜的结构和电特性。SrBi2Ta2O9薄膜在淀积Pt上电极之前和之后都要退火,第一次退火在760乇氧压下600℃时退火30分钟,在第二次退火后薄膜结晶良好。
A new low temperature processing method for preparation of SrBi2Ta2O9 thin films is proposed. These thin films were prepared on Pt/Ti/SiO2/Si substrates by a sol-gel method,their structural and electrical properties are investigated.Films are annealed before and after the top Pt electrode deposition.The lst annealing is performed in a 760 Torr oxygen atmosphere at 600℃ for 30 min, and the films are well crystallized and find grained after the 2nd annealing.
出处
《信息记录材料》
2001年第4期13-14,49,共3页
Information Recording Materials
