CVD金刚石薄膜衬底表面预处理技术进展

Pretreatment Technique of Substrate Surface for CVD Diamond Film

评述了化学气相沉积金刚石薄膜衬底表面预处理技术的进展情况。分析了表面研磨法、等离子刻蚀法、浸蚀除钴法、沉积中间层法在衬底表面形成稳定化合物等预处理对CVD金刚石薄膜沉积的影响。结果表明,金刚石粉末研磨基底、化学浸蚀除钴、在基底表面添加中间层以及在基底表面渗入第三元素并且使这种元素和基底表面的钴形成稳定中间化合物的方法都可提高金刚石的形核率,但大部分研究表明等离子体刻蚀预处理对金刚石的形核则起阻碍作用。

The progress of pretreatment techniques of substrate surface for CVD diamond film was reviewed. The influence of the pretreatment methods by abrading substrate surface, plasma erosion, removing cobalt by corrosion, intermediate layer and forming stable compounds on substrate surface on CVD diamond films was stated. Abrading substrate with diamond powder, removing cobalt by chemical corrosion, intermediate layer and forming stable intermediate compounds on substrate surface can all enhance diamond nucleation; while the most studies indicated that plasma erosion may block nucleation.