铜在甲胺介质铁氰化钾化学-机械抛光液中的电化学行为

Electrochemical Behavior of Copper in Methylamine Aqueous Solution Containing K_3Fe(CN)_6 during CMP

用电化学测试技术研究了介质和成膜剂浓度对铜表面的成膜及抛光过程的影响 ,探讨了化学机械抛光的压力、转速与膜的厚度、致密性的关系 ,找出了可以定性说明抛光过程及抛光速率的电化学变量或腐蚀电位 ( E-corrosion)及腐蚀电流密度 ( I-corrosion) ,并据 E-corrosion及 I-corrosion的变化规律得到如下主要结论 :1 )介质及成膜剂浓度对铜表面钝化膜的厚度、致密性起关键作用 ;2 )膜的厚度、致密性决定了抛光的压力及转速 ;3)

The influences of concentrations of medium and passivator on film surface of copper and polishing process have been studied by electrochemical messurements as functions of polishing pressures, disk rates, film thickness and tightness in chemical mechanical polishing(CMP) process. Electrochemical variables, such as E corrosion and I corrosion explaining CMP processes and polishing rates were investigated. The following conclusions were obtained: 1)The concentrations of medium and passivator played a key role in passive film thickness and tightness on the surface of copper; 2)The polishing pressures and rotative rates depended on film thickness and tightness; 3)The removing and regenerating rates of the film influenced the CMP process.