摘要
在讨论赝电容形成机理的基础上,应用电化学阴极沉积法在Ni基片上制得Ni(OH)2膜,经热处理得到NiO膜。研究发现,Ni(OH)2在空气中热处理所得NiO在KOH水溶液中能形成赝电容,但在N2气氛中热处理所得的NiO在KOH水溶液中未能形成赝电容;钴掺入NiO使比电容量显著增大。
Preparation of nickel oxide film by means of cathode electrodeposition and pscudocapacitance mechanism are discussed. NiO is acquired by heat treating Ki(OH)2 in air or in N2. Pseudocapacitance forms, when the NiO acquired in air being treated in KOH water solution, but it is not with the NiO acquired in N2. When doping NiO with Co, a remarkable increace of specific capacitance is found (8 refs)
出处
《电子元件与材料》
CAS
CSCD
北大核心
2001年第5期1-2,共2页
Electronic Components And Materials
基金
国家自然科学基金资助项目(50082001)
关键词
赝电容器
氧化镍
热处理气氛
钴掺杂
性能
pseudocapacitors
nickel oxide, atmosphere of heat treating
doping with cobalt