X射线分析温度对ITO膜结构与电性能的影响

The Effects of Substrate Temperature on the Structural and Electrical Properties of ITO Films from X-ray Diffraction Techniques

在不同温度基片上采用阴极磁控溅射法在玻璃上镀 ITO透明导电膜 ,采用 X射线衍射技术分析样品的结构随温度的变化情况 ,测量了样品的方块电阻、电阻率、霍尔迁移率、载流子浓度等电学性能和膜层的可见光透过率。基片温度为 180℃时 ,ITO膜 (2 2 2 )衍射峰很强 ,具有 [111]方向择优取向 ,随基片温度升高 ,(4 0 0 )、(4 40 )衍射峰增强 ,晶面随机取向增加 ,同时晶粒变大。

Indium tin oxide (ITO) films were deposited onto the glass substrates at different substrate temperatures by dc reactive magnetron sputtering method. The microstructure of these films is determined by X-ray diffraction. The electrical properties of the films such as resistivity, hall mobility and carrier concentration are measured. The optical transmittance of the films are also measured. The films deposited at 180°C have a very strong (222) diffraction peak which means a preferred orientation along the [111] direction. As the substrate temperature is increased, the (400), (440) diffraction peak intensity increase and the films tends to have a random orientation. At the same time, grain size increases and resistivity decreases.