用质子激发X射线发射分析技术测量晶片表面的污染物

MEASUREMENT OF THE POLLUTANTS ON THE SURFACE OF CRYSTAL SLICE USING PIXE

介绍了PIXE(质子激发X射线发射 )分析技术分析硅晶片表面杂质元素的探测灵敏度和最低可探测限 .用此分析技术 ,对在几个注入机上进行的注氧硅晶片的污染情况进行了测定 .发现在有的注入机上注氧时带进了Cr,Mn ,Fe ,Cu等污染元素 .结果表明 ,PIXE分析技术具有高灵敏、非破坏性等优点 ,十分适合在这一领域的研究中应用 .

The analytical sensitivity and detection limit and the applications of the PIXE technique for the samples of crystal slice are presented. The crystal slices implanted with oxygen ions at different implantation machines are polluted with element Cr, Mn, Fe, Cu etc. during oxygen ion implantation. These results show that PIXE method has high sensitivity and is non-destructive for measuring pollutants, and is suitable in this research field.