半导体材料微体缺陷激光扫描分析技术

Theoretic and experimental study on micro bulk defects in semiconducting materials by laser scanning analysis technology

半导体材料内部的一致性是实现微器件功能的重要保证。为实现半导体材料微体缺陷的无损、高效、和准确检测 ,在研究广义 L orenz- Mie理论的基础上 ,通过将散射光分布分析引入到检测当中 ,提出了对近红外激光散射信号探测和缺陷大小特征的判据 ,来检测半导体材料缺陷的方法。介绍了检测的基本原理和理论模型 ,以及基于这一构想的全自动检测系统的实现方法 ,并提出了微缺陷检测的判据。对一组 Ga As样品进行了实验研究 。

The coherence of semiconducting materials is an important assurance to realize the function of micro component. In order to detect micro bulk defects in the semiconducting materials nondestructively, effectively and accurately, based on the study of Generalized Lorenz Mie Scattering theory, a new method to detect micro defect by analyzing near infrared laser scattering light distribution is presented. The basic principle and theoretic model of the detection are introduced. An auto detection system is built and a criterion of micro bulk defect is advanced. Experiments with a set of GaAs samples are done on the system successfully to prove that the method is valid and feasible.