用透射电镜和Raman谱研究非晶硅晶化过程

INVESTIGATION OF a-Si:H LASER CRYSTALLIZATION BY TEM AND RAMAN SPECTRA

本文报道了利用透射电子显微镜和Raman谱两种方法对a-Si:H激光结晶过程的研究。结果表明结晶后得到的四个结晶区中LP-LCR,OD是液相结晶区,LP-LCR晶粒尺寸达到做器件水平。FCR-2,FCR-1是固相结晶区。利用温场模型对结品过程中的现象做了解释。并且对两种观察方法进行了比较。

The laser crystallization of a-Si:H was analyzed by using TEM and Raman spectra. The results show that two of the four crystallized zones, LP-LCR and OD, are liquid-phase crystallization and that the remaining two zones, FCR-2 and FCR-1, are sol- ld-phase crystallization. The grain size of LP-LCR meets the demands of devices. The phenomena appearing in crystallizing process were explained by temperature field model. Differences between TEM and Raman in analysis of a-Si:H crystallization were discussed.