离子注入拟南芥种子引起M_1和M_2代变异的遗传分析

Genetics Analysis of Mutagenic Effect on M_1 and M_2 of Arabidopsis thaliana Derived From the Seeds Implanted by Low Energy Ion

采用改良RAPD技术 ,对不同离子注入的拟南芥种子M1代基因池DNA、M1和M2 代株植物DNA进行变异分析及遗传稳定性分析。M1代基因池DNA分析表明 :178个随机引物中有 5 3个随机引物扩增出差异带 ,重复实验证明一些引物的PCR产物的条带具有相当的稳定性。实验结果表明 ,变异频率在一定范围内与注入剂量有关。特别是M2 代的遗传稳定性分析证明 :利用与M1代相同的引物进行PCR分析 ,其变异带与M1吻合 ,故可能离子注入引起的变异是真实遗传的。

Ameliorated RAPD technique was used to analyze the variations and their genetic stability of the gene pool DNAs of M 1 generation of different ion implanted (into seeds) Arabidopsis thaliana and the individual plant DNAs of generations M 1 and M 2. The analysis of the gene pool DNAs of generation M 1 suggested that: 53 of 178 random primers amplified differential fragments, and multiplication experiments testified that the PCR results of some primers showed considerable stability. The results revealed that variation percentages, within a certain limit, relates to implanting dosage. Particularly, the genetic stability analysis of generation M 2 certificates that: performing PCR analysis by means of the same primers of generation M 1 brought about variation bands identical with that of generation M 1, so it is possible that variations induced by ion implanting may be truly hereditary.