摘要
介绍了低能X射线和γ射线的辐照剂量及器件阈电压漂移的测试方法。讨论了不同偏置条件和辐照方向对器件效应的影响。结果表明 ,对镀金Kovar合金封装的器件 ,在背向辐照的最劣辐照偏置下 ,X射线产生的阈电压漂移是60 Coγ射线的 13.4倍。
The methods for measuring the dose induced by low energy X rays and 60 Co γ rays and the threshold voltage shift the devices are described. The influences of the different biases and irradiation directions on the devices are discussed. The results for the devices packaged by gold plating Kovar aolly under a worst case in which the two kinds of rays are incident from the back side are given. The threshold voltage shift for the low energy X rays is 13.4 times larger than that for the 60 Co gamma rays.
出处
《核技术》
CAS
CSCD
北大核心
2001年第10期807-811,共5页
Nuclear Techniques
