硅靶中频反应磁控溅射二氧化硅薄膜的特性研究

Characteristics of SiO_2 film deposited by medium frequency reactive magnetron sputtering with Si-target

报道了中频双靶反应磁控溅射制备二氧化硅 (Si O2 )薄膜的装置、工艺及薄膜特性。对制备的 Si O2 薄膜的化学配比和元素化学态进行了 SAM和 XPS分析 ,测试了膜层对钠离子 (Na+ )阻挡性能、光学折射率和可见光的透过率。研究表明作者开发的中频双靶反应磁控溅射沉积 Si O2 薄膜的设备和工艺可以高速率、大面积制备高质量的 Si O2 膜。

The system, technology, and characteristics of SiO 2 film deposited by medium frequency reactive magnetron sputtering are reported. The stoichiometric composition and element chemical state of the deposited film were analyzed by SAM and XPS. The barrier property to Na +, the refractive index and transmittance for visible light were tested. It's shown that high-quality SiO 2 film could be deposited at high rate and in large size by this medium frequency reactive magnetron sputtering system and technology.