摘要
对金属 氧化物 半导体 (MOS)器件在低剂量率γ射线辐照条件下的剂量率效应以及温度效应进行了研究 .对不同剂量率、不同温度辐照后MOS器件的阈值电压漂移进行了比较 .结果表明 ,低剂量率辐照下 ,感生界面态要受到辐照时间的长短以及生成的氢离子数目的影响 ,辐照时间越长 ,生成的氢离子越多 ,感生界面态密度越大 ;温度对界面态的影响与界面态建立的时间有关 ,低温辐照时 。
Effects of irradiation dose rates and irradiation temperature are investigated for MOS device under gamma -rays. Threshold voltage shift is compared after the MOS devices are radiated at different dose rates and different temperatures. At low dose rate, interface trap formation is affected by the irradiation time and H+ induced in the oxide, the longer the device is radiated and the greater the number of induced H+ the more the interface trap. The effects of temperature on radiation response are related to the time of interface trap formation, it takes more time to form interface trap at low temperatures.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2001年第12期2434-2438,共5页
Acta Physica Sinica
