微波等离子体化学气相沉积方法在Si衬底上生长SiC纳米线

SiC NANOWIRES GROWN ON SILICON(100) WAFER BY MPCVD METHOD

应用微波等离子体化学气相沉积方法 ,在单晶Si(10 0 )衬底上生长出SiC纳米线 .应用扫描电子显微镜、透射电子显微镜、能量损失谱 (EDS)和选区电子衍射 (SAD)等方法对纳米线化学组成和结构进行了分析和表征 .

Silicon carbide nanowires have been grown on single crystal silicon wafers by using microwave plasma chemical vapor deposition method. The nanowires are analyzed by scanning electron microscopy, transmission electron microscopy, energy dispersive spectroscopy and low-energy electron diffraction methods. The growth mechanism of nanowires is proposed.