Bi_2Ti_2O_7/Si薄膜的制备及C-V特性研究

C-V CHARACTERISTICS OF Bi_2Ti_2O_7 THIN FILMS ON n-Si(100)

采用化学溶液分解法 (CSD)在Si衬底上制备了Bi2 Ti2 O7薄膜 .X射线双晶衍射和原子力显微镜检测表明 ,所制备的薄膜主要为Bi2 Ti2 O7相的多晶材料 .同时还研究了Au Bi2 Ti2 O7 n Si(10 0 )结构的电容 电压 (C V)特性 ,结果表明 ,在Bi2 Ti2 O7薄膜中同时存在固定的与可移动的负电荷 ,可移动的负电荷导致了C

We report the growth of Bi2Ti2O7 thin films on n-type Si substrates by the chemical solution decomposition technique. Both the X-ray double-crystal diffraction and atomic force micro-spectroscopy measurements are used to check the film properties. It is shown that the film is a multi-crystal film dominated by the Bi2Ti2O, phase. The C-V measurements are also performed on Au/ Bi2Ti2O7/n-Si(100) MOS structure. It is revealed that both the fixed and mobile negative charges are contained in the film. The mobile negative charge results in the hysteresis loops on C-V curve.