摘要
采用化学溶液分解法 (CSD)在Si衬底上制备了Bi2 Ti2 O7薄膜 .X射线双晶衍射和原子力显微镜检测表明 ,所制备的薄膜主要为Bi2 Ti2 O7相的多晶材料 .同时还研究了Au Bi2 Ti2 O7 n Si(10 0 )结构的电容 电压 (C V)特性 ,结果表明 ,在Bi2 Ti2 O7薄膜中同时存在固定的与可移动的负电荷 ,可移动的负电荷导致了C
We report the growth of Bi2Ti2O7 thin films on n-type Si substrates by the chemical solution decomposition technique. Both the X-ray double-crystal diffraction and atomic force micro-spectroscopy measurements are used to check the film properties. It is shown that the film is a multi-crystal film dominated by the Bi2Ti2O, phase. The C-V measurements are also performed on Au/ Bi2Ti2O7/n-Si(100) MOS structure. It is revealed that both the fixed and mobile negative charges are contained in the film. The mobile negative charge results in the hysteresis loops on C-V curve.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2001年第12期2461-2465,共5页
Acta Physica Sinica
基金
国家重点基础研究发展规划项目 (批准号 :G19980 814 0 4 0 4)
国家自然科学基金 (批准号 :10 0 740 88)资助的课题~~