磁控溅射淀积掺Er富Si氧化硅膜中Er^(3+) 1.54μm光致发光

ROOM-TEMPERATURE 1.54μm Er^(3+) PHOTOLUMINESCENCE FROM Er-DOPED SILICON-RICH SILICON OXIDE FILM GROWN BY MAGNETRON SPUTTERING

用磁控溅射淀积不同富Si程度的掺Er富Si氧化硅薄膜 .室温下测量其光致发光谱 ,观察到各谱中都含有 1.5 4和 1.38μm两个发光峰 ,其中 1.5 4和 1.38μm的光致发光峰分别来自Er3+ 和氧化硅中某种缺陷 .系统研究了Er3+ 1.5 4μm光致发光峰强度对富Si程度及退火温度的依赖关系 .还发现 1.5 4μm发光峰强度与 1.38μm发光峰强度相互关联 。

Room temperature photoluminescence (PL) has been observed from Er doped silicon rich silicon oxide films grown by magnetron sputtering. For all kinds of silicon rich silicon oxide films grown with different excess Si contents, each PL spectrum has two peaks at 1.54 and 1.38μm, which originate from Er 3+ and a certain kind of defects, respectively, in the silicon rich silicon oxide. It was found that 1.54 and 1.38μm PL peak intensities are correlated with each other. The PL intensity-dependence on the excess-Si content and annealing temperature was studied in detail.