InAs量子点在肖特基势垒二极管输运特性中的影响

THE INFLUENCE OF InAs QUANTUM DOTS ON THE TRANSPORT PROPERTIES OF SCHOTTKY DIODE

在 77到 2 92K的范围内 ,系统研究了含InAs自组装量子点的金属 半导体 金属双肖特基势垒二极管的输运特性 .随着温度上升 ,量子点的存储效应引起的电流回路逐渐减小 .在测试温度范围内 ,通过量子点的共振隧穿过程在电流 电压 (I V)曲线中造成台阶结构 ,且使电流回路随温度的上升急剧减小 .根据肖特基势垒的反向I V曲线 ,计算了势垒的反向饱和电流密度和平均理想因子 .发现共振随穿效应使肖特基势垒在更大的程度上偏离了理想情况 ,而量子点的电子存储效应主要改变了肖特基势垒的有效势垒高度 。

In the temperature range from 77 to 292 K, we investigated the transport properties of metal - semiconductor-metal diode containing InAs quantum dots. With increasing temperature, the current hysteresis loops, which were caused by charged quantum dots, reduced gradually. The resonant tunneling process, which may occur in some Schottky barriers, could induce steps on the I-V curves in the measured temperature range and diminish the hysteresis loops intensively. We have calculated the saturation current density and ideality factor of the Schottky barrier with reverse characteristics. We found that the resonant tunneling process would shift the Schottky barrier away from the ideality status, while the charging effect mainly influenced the barrier height and therefore influenced the saturation current density.