高面指数GaAs衬底上自组织生长应变In_(0.15)Ga_(0.85)As/GaAs量子线阵列

Strained In_(0.15)Ga_(0.85)As/GaAs quantum wire array self-organized on high-index GaAs substrate by MBE

利用分子束外延（ＭＢＥ）技术在高面指数（５５３）Ｂ ＧａＡｓ衬底上自组织生长了应变Ｇａ０．８５Ｉｎ０．１５Ａｓ／ＧａＡｓ量子线阵列结构。通过原子力显微镜（ＡＦＭ）对 Ｇａ０．８５Ｉｎ０．１５Ａｓ外延层的表面形貌进行了观测。测试结果表明量子线的密度高达４×１０~５／ｃｍ。研究了量子线阵列样品的低温偏振光致发光谱（ＰＰＬ），发现其发光峰半高宽（ＦＷＨＭ）最小为 ９．２ ＭｅＶ，最大偏振度可达０．２２，这些测试结果表明制各出了高密度、高均匀性及特性良好的一维量子线阵列结构。

Strained In_(0.15)Ga_(0.85)As quantum wire (QWR) array was self-organized on a high-index ((553)Boriented) GaAs substrate. Surface morphologies of In_(0.15)Ga_(0.85)As epitaxial layers were studied using atomic force microscope (AFM). It was revealed that the density of the QWR array was as high as 4×10~5cm^(-1) At low temperature (12K), the optical characteristics of the samples were investigated by polarized photoluminescence (PPL).The PL peak at A = 868 nm from the (553)B QWR array showed a very small full width at half-maximum (FWHM) of 9.2 MeV and a large polarization anisotropy . These results showed that high uniform, high-density and good one-dimensionality In0 150 85As/GaAs quantum wire array was naturally formed.