气相反应法制备GaN纳米线

Fabrication of GaN Nanowires by a Gas Reaction Method

用简单化学反应的方法 ,采用非空间限制的条件 ,成功地在LaAlO3 衬底上制备了GaN纳米线。分别用X射线粉末衍射、场发射扫描电镜和高分辩电镜等对其成分、形貌及其结构进行了表征。制备的GaN纳米线直径大部分为 10～ 5 0nm ,且多呈平直光滑状态 ;纳米线的成分为六方晶系氮化镓晶体。

Under a non-space confinement condition,GaN nanowires with diameters of about 10-50nm were synthesized on LaAlO 3 substrates by using a simple gas reaction method.The structural properties of GaN nanowries were characterized by means of X-ray powder diffraction(XRD),field-emitting scanning electron microscopy (FE-SEM),high-resolution transmission electron microscopy (HRTEM)and selected area electron diffraction (SAED).SEM images showed that the straight nanowires with smooth surface were obtained.XRD,SAED and HRTEM indicated that the nanowires were wurtzite GaN crystals.