摘要
本文采用动态循环观察法测量了RHSe晶体在水溶液中不同过饱和度下主要显露晶面的生长速率。结果表明 ,RHSe晶体主要显露晶面的生长机制是多二维成核生长机制 ,在饱和点为38.0 0℃的溶液中 ,RHSe晶体的 { 111}和 { 10 1}晶面的临界过饱和度分别为 1.0 1%和 1.16 %。实验过程中还发现 ,当过饱和度大于 1.76 %时 ,晶体生长速率太快而出现宏观缺陷 ,因而在生长RHSe单晶时 ,过饱和度应控制在 1.76
The growth rates of main revealable faces of rubidium hydrogen selenate(RbHSeO 4) crystal in supersaturation aqueous solution were measured by dynamics cycle observation method,and the result of experiment showed that the growth mechanism of these faces was typical multiple two dimensional nucleation growth.When the saturation point of the RHSe solution is 38.00℃,the critical supersaturation of the forms{111}and {101}are respectively σ * {111}=1.01% and σ * {101}=1.16%.We found that the macroscopic defects were appeared when the crystal growth rate was high.Therefore,we suggest that the supersaturation for growing RHSe single crystal should be lower than 1.76%.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2001年第4期358-363,共6页
Journal of Synthetic Crystals
基金
福建省自然科学基金 (B 970 0 5 )资助项目
关键词
电光晶体
生长动力学
硒酸氢铷
多二维成核生长
RHSe
晶体生长
electron optical crystal
growth mechanism
rubidium hydrogen selenate
multiple two dimensional nucleation growth