摘要
研究了１ １２０℃ 高温淬火对非掺杂半绝缘ＬＥＣＧａＡＳ中 ＥＬ２浓度的影响．发现真空条件Ｔ，在１１２０℃热处理２ｈ～８ｈ并快速冷却后，样品中ＥＬ２浓度下降近一个数量级，提高高温过程中的 ＡＳ压，可抑制 ＥＬ２浓度的大幅下降．
The effects of quenching on EL2 concentration have been investigated for undoped semi-insulating LECGaAs. It is found that EL2 concentration can be decreased by about one order magnitude after vacuum annealing at 1120'C for 2 h ~ 8 h following by a fast cooling. The decrease in EL2 concentration can be suppressed by increasing As pressure during annealing.
出处
《河北工业大学学报》
CAS
2001年第1期67-69,共3页
Journal of Hebei University of Technology
基金
河北省自然科学基金资助项目!(195051)
