摘要
采用双离子束共溅射方法制备了SiOX 薄膜 ,XRD和TEM的分析表明SiOX 薄膜为非晶结构 ,XPS分析表明样品主要是以SiO1.90 的形式存在于薄膜中。其光吸收谱呈现了明显的吸收边蓝移现象 ,且随薄膜厚度的增加 ,光吸收谱中出现了较明显的宽化的吸收峰。在室温下观察到了可见光致发光 (PL)现象 ,探测到样品有四个PL峰 ,它们的峰位分别为～ 32 0nm、～ 4 1 0nm、～ 56 0nm和～ 6 30nm 。
The SiO X films were prepared by a dual ion beam co sputtering method.The structure of the films studied by the aid of TEM and XRD is amorphous.The majority content of the sample is SiO 1.90 by the aid of XPS.From the optical absorption spectra,the absorption edges of the films clearly exhibited blue shifts compared with the bulk Si,and the broad absorption peaks appear with the increase of the thickness of the sample.The photoluminescence(PL)spectra were found at room temperature,which have 4 PL peaks at 320nm,410nm,560nm,and 630nm,respectively.The position and strength of the peak didn't vary with the increase of the thickness of the film.
出处
《微细加工技术》
2001年第4期39-43,共5页
Microfabrication Technology
