摘要
推导了在考虑了基区复合电流后双极晶体管厄利电压的理论表达式。用该表达式计算了 Si/Si Ge异质结双极晶体管的厄利电压 ,并且与仿真结果进行了比较。比较结果表明 。
In some kinds of heterojunction bipolar transistors,the neutral base recombination currents are dominant mechanism,and can affect Early voltage obviously.The mathematical equations of Early voltage with neutral base recombination current are developed.By these equations the Early voltages as a function of minority carrier life time in Si/GeSi HBT are calculated.At the same time we also simulated the output characteristics of Si/SiGe HBT by two dimension semiconductor device simulator.The calculated results obtained from theoretic formula are basically agree with those simulated.
出处
《半导体情报》
2001年第5期44-47,57,共5页
Semiconductor Information
关键词
双极晶体管
厄利电压
基区复合电流
bipolar transistors
Early voltage
base recombination current
