摘要
随着集成电路集成度的提高 ,器件间距不断减小 ,在 Ga As MESFET中产生了一种被称为背栅效应的有害寄生效应。由于器件间距越来越小 ,某一个器件的电极可能就是另一个器件的背栅 ,背栅效应影响了集成电路集成度的提高 ,因此背栅效应在国内外引起了重视。
As the advance in integration level of GaAs ICs,GaAs MESFETs can exhibit a pheno mena that the drain current decreases when a negative voltage is applied to the substrate.The phenomena is termed backgating effect.The backgating effect impedes the advance in integration level of GaAs ICs.So backgating effect receives considerable attention.This paper introduces the backgating effect and its origin.
出处
《半导体情报》
2001年第5期48-54,共7页
Semiconductor Information
关键词
背栅效应
MESFET
砷化镓
场效应晶体管
backgating effect
channel substrate interface
space charge region(SCR)
hole trap
electron trap
