一种可测低能γ和X射线的高纯n型硅探测器

A High Purity n-type Silicon Detector for Measurement of Low Energy r and X Rays

采用蒸发金、钯和离子注入硼作势垒接触,低温扩散锂制备欧姆接触的方法,制成性能良好的低能γ和X射线高纯硅探测器。介绍其制作方法和性能。探测器有效面积为14.5mm^2,厚度3.3mm。在液氮温度下对^(55)Fe 5.9kev X射线的最佳能量分辨率为162eV,对^(241)Am59.5keV低能γ射线的最佳能量分辨率为373eV。同时对三种不同制作方法所得的高纯硅探测器和Si(Li)X射线探测器进行了对比。

The high purity silicon detectors of good performances for low energy r and X rays have been prepared by using gold, palladium evaporation or boron ion implantation to make a barrier contact and lithium diffusion at low temperature to make an ohmic contact. The fadrication method and characteristics of detectors are introduced. The active area and the sensitive depth are 14.5mm2 and 3.3mm, the optimum energy resolution (FWHM) for 55Fe 5.9 keV X-ray and 241Am 59.5 keV low energy r ray are 162 eV and 373 eV at 77K respectively. The fabricated high purity silicon detectors by three different methods are compared with the Si(Li) detectors for X-ray too.