铝诱导晶化法低温制备多晶硅薄膜

Preparation of Polycrystalline Silicon Films by Aluminium Induced Crystallization at Low Temperatures

为了满足在普通玻璃衬底上制备多晶硅薄膜晶体管有源矩阵液晶显示器，低温（＜６００℃）制备高质量多晶硅薄膜已成为研究热点．本文研究了一种低温制备多晶硅薄膜的新工艺：金属诱导非晶硅薄膜低温晶化法．在非晶硅薄膜上蒸镀金属铝薄膜，并光刻形成铝膜图形，而后于氮气保护中退火．利用光学显微镜和拉曼光谱等测试方法，研究了Ａｌ诱导下非晶硅薄膜的晶化过程，结果表明；在５６０℃退火６ｈ后；铝膜下的非晶硅已完全晶化，确定了所制备的是多晶硅薄膜．初步探讨了非晶硅薄膜金属诱导横向晶化机理．

The preparation of high quality polycrystalline silicon films at low temperature (< 600 degreesC) has been recently become one of the hot spots, owing to the requirement of preparing polycrystalline silicon thin film transistors in the active matrix liquid crystal display on the substrate of common glass. In this paper, the new process for crystallization of amorphous silicon films, named the metal induced lateral crystallization of amorphous silicon films at low temperatures, was developed. Aluminium. thin films were evaporated on the top of the amorphous silicon films and selectively formed by photolithograph. The films were subsequently annealed in N-2 atmosphere. The crystallization mechanism of a-Si thin film by Al induced was discussed. The results show that the amorphous silicon right under the Al layer can be crystallized by annealing at 560C for 6h and the thin films are polycrystalline silicon thin films.