BaTiO_3基PTCR陶瓷中B_2O_3蒸汽掺杂的异常行为

Abnormal Behavior of B_2O_3 Vapor Dopants in BaTiO_3 Based PTCR Ceramics

钛酸钡基半导化陶瓷中的ＰＴＣＲ效应通常与材料中的施受主掺杂密切相关．在高温下Ｂ２Ｏ３具有较高的蒸汽压，通过Ｂ２Ｏ３蒸汽掺杂的研究表明，含主族元素Ｂ的氧化物蒸汽掺杂，钛酸钡基半导化陶瓷样品的升阻比同样得到了大幅度提高，同时室温电阻率也有所增加．Ｂ２Ｏ３蒸汽掺杂ＢａＴｉＯ３基材料的ＰＴＣＲ效应的提升可能得益于硼填隙和钡缺位相关的复合缺陷在晶界上的形成．

The PTCR (Positive Temperature Coefficient Resistivity) effect of BaTiO3 based semiconducting ceramics is usually allied to the donor or acceptor. B2O3 with high vapor pressure at high temperatures can be used as vapor dopants. The behavior of B2O3 vapor dopants was studied in BaTiO3 based semiconducting ceramics. The dramatic results show that the resistivity jumping of the samples is improved distinctly, in the mean time, the room temperature resistivity is also increased. The enhancement of the PTCR effect of the samples doped with B2O3 va,por is possibly associated with the interstice of boron ion and barium vacancy or their related composite defects.