GaP薄膜的制备与性能研究

Preparation and Properties of Gallium Phosphide Films

利用磁控溅射法成功地制备出 Ga P薄膜 ,并对 Ga P薄膜的沉积速率、成分、结构及红外光学性能进行了研究。结果表明 ,沉积薄膜中 Ga与 P的原子比接近 1∶ 1,形成了 Ga P化合物 ,呈非晶态结构。设计并制备出 Ga P/ DL C复合膜系 ,结果表明该膜系在 8～ 11.5 μm波段对 Zn S衬底具有明显的增透效果。制备的 Ga P薄膜的硬度明显高于 Zn S衬底的硬度 ,且与 Zn S衬底结合牢固 。

GaP films have been prepared by RF magnetron sputtering of single crystalline gallium phosphide The deposition rate, composition, structure, hardness and optical properties of GaP films have been also investigated The results show that the atom ratio of gallium to phosphor is near 1∶1 and the deposited films are amorphous compound GaP; Anti reflective and protective films consisted by DLC and GaP films are designed and deposited on ZnS substrate The results indicate that the average transmittance in the 8~11 5μm waveband is improved from 69 1% to 86 5% The hardness of GaP films (6860MPa) is much higher than that of ZnS substrate (2744MPa), and it also adhere ZnS substrate firmly, so GaP films could offer excellent protection for ZnS windows and domes