条形半导体激光器注入电流的横向分布

Lateral Distribution of Injection Current in Stripe Geometry Semiconductor Lasers

用双连通域内的保角变换方法解二维拉普拉斯方程，得到了条形半导体激光器注入电流密度的横向分布．研究了在电阻层的电阻率比较大的情况下，中央激活区不同宽度和不同电极宽度时注入电流密度的横向分布．如果中央激活区宽度小于条形电极宽度，注入电流密度在中央激活区内近似为常数，而在中央激活区外很快地衰减．

Based upon the solutions of two-dimensional Laplance equations which may be solved with the conformal translation, we has deduced the lateral distribution of injection current in stripe geometry semiconductor lasers. We investigated the variations of lateral distribution of injection current density with different width of the central active regions and different electrode width in the case of low resistivity at resistance layer. If the central active region is thicker than electrode, the injection current density approximates constant in the central active region and quickly declines out the central active region.