铜互连布线及其镶嵌技术在深亚微米IC工艺中的应用

Application of Copper Interconnect and Damascene Technology in Deep Submicron IC

近几年来 ,随着 VLSI器件密度的增加和特征尺寸的减小 ,铜互连布线技术作为减小互连延迟的有效技术 ,受到人们的广泛关注。文中介绍了基本的铜互连布线技术 ,包括单、双镶嵌工艺 ,CMP工艺 ,低介电常数材料和阻挡层材料 。

As an effective method of reducing the delay of interconnect, copper interconnect technology draws widely attention in recent years because of increasing circuit density and decreasing featuer dimension in VLSI devices. This paper introduces basic technology of copper interconnect, including single and dual damascene technology, CMP technology, low k dielectric materials, barrier materials and reliability of copper interconnect.