半导体功率器件热膨胀特性的全息干涉测试

A Study on Thermal Deformation in Semiconductor Devices Using Holographic Interferometry

采用全息干涉技术对半导体功率器件通电运行中的热变形进行了研究 ,测量了器件的离面位移分布及其弯曲挠度。通过改变功率数值或对样品的装配条件 ,探索功率、工作条件、夹持应力等因素对器件及芯片区域变形产生的影响 ;

Thermal deformation property of the semiconductor device has been studied using holographic interferometry (HI) technique Results on the deformation types and magnitudes of the device in power supply are presented, which shows that the out of plane displacement is nearly ball shaped in the power supply and the maximum displacement occurs around the center of the chip A detailed analysis on the effects of power is made and external clamping conditions for different displacement patterns are given