InSb-In共晶体薄膜磁阻式电流传感器

InSb-In eutectic film magnetoresistive current sensor

介绍一种用锑化铟—铟 (InSb -In)共晶体薄膜磁阻元件 (MR)制成的电流传感器 (MRCS) ,并设计了一种能较大幅度增大其输出电压的信号处理电路。当处理电路的电压增益为 80db ,待测的 5 0Hz交流电流在 40～ 110mA之间变化时 ,输出电压在约 1V至约 3 .5V范围内变化 ,并且两者之间有比较好的线性关系 ,标准偏差 <0 .0 2。输出信号电压与本底噪声之比是 (2 4～ 46 ) :1。

A current sensor is made up from a InSb-In eutectic film magnetoresistor (MR) and it is introduced that a signal-processing circuit is designed to improve the output voltage level from the current sensor. It is obtained that the output voltage varies from 1V to 3.5V with a signal-to-noise (S/N)=(24～46):1 as a tested alternating current with 50Hz changes from 40mA to 110mA by the signal-processing circuit with a voltage gain of 80db, and there is a better linearity with a standard deviation of 0.02 or less.