锗纳米镶嵌薄膜的电致发光及其机制

Electroluminescence from Ge-nanocrystal-embedded thin films and its mechanism

采用射频磁控溅射技术 ,在Ge纳米镶嵌薄膜的基础上制备出电致发光器件。器件的结构为半透明Au膜 /Ge纳米镶嵌薄膜 /p Si基片。当正向偏压大于 6V时 ,用肉眼可以观察到可见的电致发光 ,但在反向偏压下探测不到光发射。所测电致发光谱中只有一个发光峰 ,峰位在 5 10nm ( 2 .4eV ,绿光 ) ,并且随着正向偏压的升高 ,峰位不发生移动 ;对于不同温度退火的样品 ,峰位也保持不变。

Electroluminescent devices have been fabricated based on Ge nanocrystal embedded silicon oxide films by radio frequency magnetron sputtering technique. Visible electroluminescence from the devices can be seen with naked eye when a forward bias greater than 6V is applied, while no light emission can be observed under reverse bias. The EL spectra are found to have only one luminescent band peaked at 510nm (2.4eV,green light) and the peak energy does not shift evidently with annealing temperature or with forward bias. The mechanism of EL was discussed.