硅应力缓冲衬底上GaAs薄层转移探索

Explore of Transfer GaAs thin Layer onto Si Compliant Substrate

本文研究晶格失配较大的 - 族化合物向 Si基底转移薄层的技术 ,为此制备了 Si/ Si O2 / Si结构的应力缓冲衬底。利用智能切割 (smart- cut)技术制备薄层 Ga As并以低温 Si O2 层过渡与应力缓冲衬底相键合 ,达到 Ga As向 Si基底的转移目的。并对结果进行了分析和讨论 ,认为该技术是可行的。同时特别强调了低温淀积 Si O2 层的完美性对最终转移的 Ga

The explore of transformation between lattice mismatch layers such as GaAs/Si. For this propose the compliant substrate Si/SiO2/Si structure is fabricated and the thin layer of GFaAs is obtained by smart-cut method, which are bonded to comopliat substrate with low temperature SiO2 as transition layer. The transfer of thin layer GaAs onto Si were achieved. The results were analysed and discussed, in which the feasibility of transfer process is concluded. And it was emphasized that the perfect of layer of SiO2 with low temperture deposited is important for resulting completion of GaAs layer transferred.