硅基SiO_2光波导

Silica-on-Silicon Optical Waveguides

在硅基上通过氢氧焰淀积的 Si O2 ,厚度达到了 2 0 μm;通过掺 Ge增加芯层的折射率 ,折射率比小于 1% ,并可调 ;用反应离子刻蚀工艺对波导的芯层进行刻蚀 ,刻蚀深度为 6 μm,刻蚀深宽比大于 10 ;波导传输损耗小于0 .6 d B/ cm(λ=1.5 5 μm) ,并对波导的损耗机理和测试进行了分析与研究 .另外 ,为实现光纤与波导的耦合 ,结合微电子机械系统技术 ,在波导基片上制作了光纤对准

The thickness of SiO 2 film on silicon substrate obtained by Flame Hydrolysis Deposition (FHD) is over 20μm.The refractive index of SiO 2 core layer doped germanium is bigger than that of other layers,and the refractive index ratio less than 1% and controllable.The core layer is etched by reactive ion etching.The etching depth is 6μm,and the aspect ratio is over 10.Waveguides loss is less than 0 6dB/cm ( λ =1 55μm).The waveguides loss mechanism is analysed.In addition,the V grooves for fiber to waveguide coupling with MEMS technology are fabricated on silicon substrates.