超大规模集成电路的一些材料物理问题(Ⅱ)──尺寸缩小带来的巨大挑战

SOME ISSUES OF THE MATERIAL PHYSICS FOR ULTRA LARGE SCALE INTEGRATION(PART Ⅱ) ──GIANT CHALLENGES FOR THE SCALED ULSI

随着CMOS技术缩至 10 0nm或更小 ,在CMOS器件结构、接触电阻以及大直径硅晶片等方面均遇到一些材料物理的巨大挑战 .

We discuss the giant challenges that material physics faces regarding the structure of CMOS devices, contact resistance, and large diameter silicon wafers when CMOS technology reaches below 100nm.