离子辐照纳米Si_3N_4量子点的表面分析与蓝光增强机理研究

Surface Property and Enhacement Mechanism of Blue-light Emission of Ion Injecting Si_3N_4 Quantum Dots

本文对Ｎ十离子辐照纳米氮化硅量子点的表面特性进行了测试、分析，对离子辐照后量子点蓝光发射显著增强这一现象给出了解释．ＦＴＩＲ测试发现，辐照使Ｓｉ－Ｎ键结合峰增强，说明辐照后Ｓｉ－Ｎ 键合数增加，而其它峰未发生变化．ＸＰＳ全谱表明，量子点中的氧主要集中在其表面，辐照使量子点表面的氧含量增加，进一步通过ＸＰＳ芯态能谱测试发现，辐照使表面的氧、硅由吸附态转化成结合态．我们认为ＳｉＯ２／Ｓｉ３Ｎ４界面中的激子模型可以解释量子点蓝光增强现象，界面层激子效应是蓝光发射增强效应产生的根源．

We examined the surface property of nanometer Si3N4 quantum dots, before and after N+ ion injection. XPS measurement revealed that there were more oxygen existing on the surface comparing to that in the bluk. After ion injection, there were more oxygen existing on the suface, furthermore adsobing oxygen converted to binding oxygen. The exciton effect in the interfacial layer played role in enhancing blue-light emission.