用分子自组装技术制备的单电子器件的Monte Carlo模拟

Monte Carlo simulation of single electron device made by molecular self-assembly technology

用分子自组装技术制备出纳米金单电子器件 ,并测量了其伏安特性 ,根据单电子系统的半经典理论 ,用MonteCarlo法对其结果进行了模拟 .结果表明 ,模拟出的伏安曲线与实测的伏安曲线有较好的一致性 ,反映了模拟方法用于单电子器件研究的合理性 ,此外发现 ,虽然单电子器件两电极间含有众多的纳米粒子 ,但在低压区 。

Single electron devices have been prepared by the molecular self assembly technique and their voltage current characteristics measured. On the other hand, single electron devices were studied by the Monte Carlo simulation based on a semi classical theory of single electron phenomena. The simulatd voltage current curve is similar to the measured one. This shows that the above method may be used to study single electron devices.Furthermore ,the simulatd results indicate that the voltage current characteristic of a single electron device is determined only by the small quantity of nanoparticles in the low voltage region though there are a large number of nanoparticles between the two electrodes.