4H-SiC射频功率MESFET的自热效应分析

Analysis of self-heating effect on 4H-SiC RF power MESFETs

采用载流子速度饱和理论 ,建立了包含“自热效应”影响的适用于 4H SiCMESFET的大信号输出I V特性解析模型 ,在模型中引入了温度变化的因素 ,提出了非恒定衬底环境温度T0 的热传导模型 ,模拟结果与实验值一致 。

A large signal analytical model with temperature considered for 4H SiC radio frequency power MESFET I V characteristics is proposed based on the theory of saturated carrier velocity, by means of which the self heating effect is taken into account so as to analyze the temperature performance of SiC power MESFET. The heat transport between the channel and the substrate is modeled with non constant temperature T 0 at the bottom of 4H SiC substrate in order to fit the real actions of devices. A good agreement between simulation and measurement is obtained.