电化学“沾笔”纳米刻蚀及其他(英文)

Electrochemical AFM “Dip-Pen” Nanolithography and More

本文提出了一种基于“沾笔”纳米刻蚀和电化学还原技术在表面上制备金属及半导体纳米结构的普适性方法。用这种方法可以在硅表面直接书写线宽度低于50纳米的多种金属和半导体组成的纳米结构。这种简单而有效的方法在精确控制位置和结构的功能化纳米器件制备中具有重要的潜在应用前景。

A general approach for fabricating metallic and semiconducting nanostructures has been developed based on “dip pen” nanolithography combined with electrochemical reduction of water soluble salts. This method can be used to directly write many different types of metal or semiconductor features on Si substrates with sub 50 nanometer linewidth. This simple but powerful method has great potential in fabricating functional nanodevices with high degree of control over their locations and structures.