摘要
研究了区熔再结晶 (ZMR)设备及其工艺特点 .在覆盖SiO2 的重掺P型单晶硅衬底上用快速热化学气相沉积 (RTCVD)在其上沉积一层很薄的多晶硅薄膜 ,用区熔再结晶法对薄膜进行处理 ,得到了晶粒致密 ,且取向一致的多晶硅薄膜层 .以此薄膜层为籽晶层 ,再在上面以RTCVD制备电池活性层 ,经过标准的太阳电池工艺 ,得到了转换效率为 10 .2 1%,填充因子为 0 .6 913的电池产品 .
ZMR (zone melting recrystallization) apparatus is introduced, and the processing characteristic of ZMR is studied. A very thin poly-crystalline silicon film is deposited by RTCVD on a heavily doped P-type mono-crystalline silicon substrate coated by SiO 2. After ZMR, a seed layer is obtained, in which the crystalline grain is compact and the orientation is uniform. Then the active layer of solar cell is deposited by RTCVD. After standard solar cell processing, the efficiency of finished cell is 10.21%, and fill factor is 0.691 3 under the conditions of AMO, 1.07 cm 2 and 25 ℃.
出处
《北京师范大学学报(自然科学版)》
CAS
CSCD
北大核心
2001年第6期746-749,共4页
Journal of Beijing Normal University(Natural Science)
基金
国家科技部"九七三"基金资助项目